Suitable for curing semiconductor wafers (photoresist PI, PBO, BCB curing), glass substrate baking, and high-precision annealing treatment, etc.
Max. working temperature: 360℃, 600℃.
Oxygen concentration lower than 20 ppm.
Suitable for curing semiconductor wafers (photoresist PI, PBO, BCB curing), glass substrate baking, and high-precision annealing treatment, etc.
Max. working temperature: 360℃, 600℃.
Oxygen concentration lower than 20 ppm.
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